high-electron mobility transistor(English)
- is formed around a junction between two materials having different bandgaps, e.g. gallium nitride and aluminum gallium nitride. At this heterojunction, gallium nitride's natural polarity causes a sheet of excess charge to collect
- GaN, Si, SiC, WBG, IoE, MIMO, RIS, CPT, DNPC, EV, GAN, GTO, IGBT, IPT, JFET, MOSFET, MV, PFC, SBD, SiC, SOC, WBG, WPTFOM, BJT, FET, MESFET
- Magnetism, Bioengineering, Communication
- https://doi.org…OC.2022.3196696
- https://doi.org…OC.2021.3071977
- https://spectru…nsistor-history
- https://doi.org…OC.2021.3072170